preliminary data sheet the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1999 6-pin dip, 50 pf low output capacitance 35 w w w w low on-state resistance 1-ch o p tical cou p led mos fet document no. p14660ej1v0ds00 (1st edition) date published december 1999 ns cp(k) printed in japan solid state relay ocmos fet ps7341b-1b , ps7341bl- 1b description the ps7341b-1b and PS7341BL-1B are solid state relays containing gaas leds on the light emitting side (input side) and normally close (n.c.) contact mos fets on the output side. they are suitable for analog signal control because of their low offset and high linearity. the PS7341BL-1B has a surface mount type lead. features ? low output capacitance (c out = 50 pf typ.) ? low on-state resistance (r on2 = 35 w typ. ) ? high isolation voltage (bv = 3 750 vr.m.s.) ? 1 channel type (1 b output) ? low led operating current (i f = 2 ma) ? designed for ac/dc switching line changer ? small package (6-pin dip) ? low offset voltage ? PS7341BL-1B: surface mount type applications ? exchange equipment ? measurement equipment ? fa/oa equipment
preliminary data sheet p14660ej1v0ds00 2 ps7341b-1b,PS7341BL-1B package dimensions (in millimeters) 9.250.5 3.50.3 4.150.3 3.30.3 0.50.1 2.54 1.340.1 0.25 m 0 to 15? 7.62 6.50.5 9.250.5 6.50.5 0.10 +0.10 C0.05 0.90.25 9.600.4 3.50.3 1.340.1 0.25 m 2.54 ps7341b-1b PS7341BL-1B 1. led anode 2. led cathode 3. nc 4. mos fet drain 5. mos fet source 6. mos fet drain 123 654 top view 1. led anode 2. led cathode 3. nc 4. mos fet drain 5. mos fet source 6. mos fet drain 123 654 top view
preliminary data sheet p14660ej1v0ds00 3 ps7341b-1b,PS7341BL-1B absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit diode forward current (dc) i f 50 ma reverse voltage v r 5.0 v power dissipation p d 50 mw peak forward current *1 i fp 1a mos fet break down voltage v l 400 v continuous connection a i l 90 ma load current *2 connection b 120 connection c 180 pulse load current *3 (ac/dc connection) i lp 180 ma power dissipation p d 560 mw isolation voltage *4 bv 3 750 vr.m.s. total power dissipation p t 610 mw operating ambient temperature t a - 40 to +85 c storage temperature t stg - 40 to +125 c *1 pw = 100 m s, duty cycle = 1 % *2 conditions: i f 3 2 ma. the following types of load connections are available. connection a v l (ac/dc) 1 6 25 4 3 i l l connection b connection c 1 6 2 5 4 3 i l l v l (dc) + C 1 6 2 5 4 3 i l i l l v l (dc) + C 1 6 2 5 4 3 i l l v l (dc) + C i l + i l *3 pw = 100 ms, 1 shot *4 ac voltage for 1 minute at t a = 25 c, rh = 60 % between input and output
preliminary data sheet p14660ej1v0ds00 4 ps7341b-1b,PS7341BL-1B recommended operating conditions (t a = 25 c) parameter symbol min. typ. max. unit led operating current i f 21020ma led off voltage v f 00.5v electrical characteristics (t a = 25 c) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 10 ma 1.2 1.4 v reverse current i r v r = 5 v 5.0 m a mos fet off-state leakage current i loff i f = 10 ma, v d = 400 v 10 m a output capacitance c out i f = 10 ma, v d = 0 v, f = 1 mhz 50 pf coupled on-state resistance r on1 i f = 0 ma, i l = 10 ma 50 70 r on2 i f = 0 ma, i l = 90 ma, t 10 ms 35 55 w turn-on time *1 t on i f = 10 ma, v o = 5 v, pw 3 10 ms 0.2 ms turn-off time *1 t off 1.5 isolation resistance r i-o v i-o = 1.0 kv dc 10 9 w isolation capacitance c i-o v = 0 v, f = 1 mhz 1.1 pf *1 test circuit for switching time v l r l i f r in pulse input input monitor monitor v o t on t off 10 % 90 % 0 v o = 5 v 50 % input output
preliminary data sheet p14660ej1v0ds00 5 ps7341b-1b,PS7341BL-1B [memo]
preliminary data sheet p14660ej1v0ds00 6 ps7341b-1b,PS7341BL-1B [memo]
preliminary data sheet p14660ej1v0ds00 7 ps7341b-1b,PS7341BL-1B [memo]
ps7341b-1b,PS7341BL-1B caution within this device there exists gaas (gallium arsenide) material which is a harmful substance if ingested. please do not under any circumstances break the hermetic seal. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m7 98. 8
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